BD243BG

Overview

The onsemi BD243BG is an NPN epitaxial silicon power transistor housed in a TO-220 package. It supports a maximum DC collector current of 6 A and withstands collector-emitter and collector-base voltages of 100 V DC. The device features a minimum DC current gain (hFE) of 15, a transition frequency of 1 MHz, and a maximum power dissipation of 65 W at 25°C case temperature. Operating temperatures range from -65°C to +150°C, with a maximum emitter-base voltage of 5 V.

Feature Summary

• NPN epitaxial silicon construction for robust power handling
• High voltage tolerance with 100 V collector-emitter rating
• Capable of sustaining 6 A continuous DC collector current
• Designed for through-hole mounting in standard TO-220 packages

Applications

• Linear amplifier circuits
• Switching regulator topologies
• Motor control interfaces

Procurement Notes

Verify the specific suffix 'BG' against official manufacturer documentation to confirm exact binning or testing criteria, as generic datasheets often list base part numbers like BD243C without distinguishing suffix variations. Ensure the procurement source provides traceability to original manufacturing data sheets rather than third-party summaries. Confirm RoHS compliance status directly with the supplier, as historical production runs may vary in regulatory adherence. Request batch-specific test reports if required for critical design validation.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with moderate current handling in a through-hole form factor. The 100 V rating makes it suitable for applications exceeding lower-voltage alternatives. Consider thermal management requirements carefully, as the 65 W dissipation rating assumes optimal heatsinking at a 25°C case temperature. Evaluate the hFE minimum of 15 to ensure adequate drive current availability for the intended load conditions.

Part Context

This transistor belongs to the BD243 series, which includes complementary PNP devices such as the BD244C. The series is engineered for medium-power linear and switching applications. The BD243 variant specifically provides the NPN counterpart necessary for push-pull configurations or single-ended amplification stages where high voltage isolation is required.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided reference material.