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The onsemi BD243BTU is an NPN epitaxial silicon power transistor housed in a TO-220AB through-hole package. It supports a maximum DC collector current of 6 A and offers a collector-emitter voltage (VCEO) of 80 V, with a collector-base voltage (VCBO) of 100 V. The device features a minimum DC current gain (hFE) of 15 and a transition frequency (fT) of 1 MHz. It operates within a temperature range of -65°C to +150°C and handles up to 65 W of power dissipation at 25°C case temperature.
Verify the specific suffix 'BTU' against official manufacturer documentation to confirm exact tape-and-reel packaging specifications and compliance status. Ensure the component matches the required 80 V rating rather than other variants in the BD243 family. Confirm lead times and authenticity through authorized distribution channels.
Select this component when an NPN power transistor with 80 V collector-emitter voltage and 6 A continuous current capacity is required. It serves as the complementary counterpart to the BD244BTU PNP transistor in push-pull configurations. Consider the TO-220AB package for effective heat sinking in medium-power designs.
This part belongs to the BD243/B/C series of medium-power NPN transistors manufactured by onsemi. These devices are designed for general-purpose linear and switching applications. The BD243BTU specifically denotes the 80 V variant within this lineup, distinct from the 45 V (BD243) and 100 V (BD243C) versions.
Compatible substitutes include BD243B and BD243BT from various manufacturers offering identical 80 V ratings and TO-220 packages.