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The BD244A is a PNP epitaxial silicon power transistor manufactured by onsemi. It features a collector-base voltage of -60 V and a collector-emitter voltage of -60 V. The device supports a continuous DC collector current of -6 A and a pulsed collector current of -10 A. Maximum collector dissipation is rated at 65 W at a case temperature of 25°C. The junction temperature range extends from -65°C to 150°C, with an emitter-base voltage limit of -5 V.
Verify the specific part number suffix against official manufacturer documentation to confirm exact electrical ratings. Ensure that the ordering system reflects updated nomenclature changes resulting from corporate integrations. Confirm package type and pinout compatibility before finalizing procurement orders.
Select this component when a PNP transistor with a -60 V rating is required for medium power tasks. Verify that the application circuit can accommodate the specified maximum collector current and power dissipation limits. Consider thermal management requirements based on the TO-220 package dimensions and derating curves provided in the datasheet.
This device belongs to the BD244/A/B/C series of PNP power transistors. The series offers varying voltage ratings across different suffixes, with the BD244A specifically designated for -60 V operation. It serves as the direct complementary counterpart to the BD243A NPN transistor within the same product family.
BD244B
The collector-emitter sustaining voltage (VCEO(sus)) is -60 V when measured at IC = -30mA and IB = 0.
No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems or medical devices without express written approval.