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The BD244B is a PNP epitaxial silicon power transistor manufactured by ON Semiconductor. It features an 80 V collector-emitter voltage rating and supports a continuous collector current of 6 A with a peak pulse current of 10 A. The device provides a maximum collector dissipation of 65 W at a case temperature of 25°C, with a thermal resistance from junction to case of 1.92 °C/W. It operates within a junction temperature range of -65°C to +150°C and utilizes a TO-220 package.
Verify the specific part number suffix against the official ON Semiconductor database to ensure correct voltage grading and packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Review the latest datasheet revision for any updates to absolute maximum ratings or electrical characteristics prior to finalizing procurement orders.
Select the BD244B when a PNP transistor with an 80 V breakdown voltage and 6 A continuous current capability is required. Ensure the application design accounts for the 65 W power dissipation limit and the necessary thermal management for the TO-220 package. Verify that the complementary NPN counterpart matches the system requirements for balanced performance in push-pull configurations.
This component belongs to the BD244/A/B/C family of PNP power transistors. These devices are engineered as complements to the BD243 series NPN transistors. The family offers varying voltage ratings to suit different circuit demands while maintaining consistent current handling and package compatibility across the lineup.
The BD244B serves as the direct PNP complement to the BD243B. Designers replacing this component should verify that substitute parts match the 80 V rating, 6 A current capacity, and TO-220 footprint to maintain circuit integrity.