BD244C-S

Overview

The BD244C-S is a silicon PNP power transistor manufactured by Bourns Inc. (originally specified by Inchange Semiconductor). It utilizes planar technology with a 'Base Island' layout to achieve high gain and low saturation voltage. The device is housed in a TO-220C package, where the collector is connected to the mounting base for thermal efficiency. It is designed for medium-power linear and switching applications, operating within a temperature range of -55°C to 165°C.

Feature Summary

• Utilizes planar technology with Base Island layout for high gain performance
• Features very low saturation voltage characteristics
• Collector terminal connects directly to the mounting base for heat dissipation

Applications

• Medium power linear applications
• Medium power switching applications

Procurement Notes

Verify that the suffix '-S' denotes the specific TO-220C package variant as documented in the source specification. Confirm the manufacturer origin, as the datasheet attributes the design to Inchange Semiconductor while the query identifies Bourns Inc. Ensure the component meets the required absolute maximum ratings for collector-base and collector-emitter voltages before integration.

Selection Notes

Select this component for designs requiring a PNP power transistor with high current gain and low saturation voltage. The TO-220C package facilitates direct mounting to heatsinks via the collector terminal. Verify that the application operates within the specified -55°C to 165°C temperature range and does not exceed the absolute maximum ratings defined in the product specification.

Part Context

The BD244C belongs to a family of complementary silicon power transistors, paired with NPN types such as the BD243 series. These devices are engineered for robust performance in medium-power circuits. The 'C' designation typically indicates specific voltage breakdown characteristics within the series, distinguishing it from variants like the BD244A or BD244B.