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Product Detailed Parameters
- Description：TRANS NPN 45V 25A SOT-93
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：25 A
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：4V @ 5A, 25A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 15A, 4V
- Power - Max：3 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-218-3
- Supplier Device Package：SOT-93
- Grade：-
- Qualification：-
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Overview
The BD249-S is an NPN silicon power transistor manufactured by Bourns Inc. Designed for complementary use with the BD250 series, this component features a maximum collector current of 25 A and a collector-emitter voltage rating of 45 V. It offers a power dissipation capacity of 125 W at a 25°C case temperature. The device utilizes a TO-218-3 package configuration, ensuring robust performance in high-power applications requiring reliable switching and amplification capabilities.
Feature Summary
- Designed for complementary use with the BD250 series
- High power dissipation capability at standard case temperatures
- NPN silicon construction for robust power handling
Applications
- Power amplifier circuits
- Complementary switching applications
- General-purpose power transistor tasks
Procurement Notes
Verify the specific suffix 'S' against official Bourns documentation to confirm package type and electrical characteristics. Confirm product status as obsolete before procurement planning. Ensure compatibility with existing thermal management designs given the 125 W dissipation rating. Cross-reference datasheet parameters for collector current and voltage limits to match circuit requirements precisely.
Selection Notes
Select this component when a high-current NPN transistor is required for power stages. Consider the complementary BD250 series for paired configurations. Evaluate thermal constraints due to the significant power dissipation rating. Verify that the TO-218-3 package fits the mechanical layout. Check availability status as the part may be discontinued.
Part Context
This NPN silicon power transistor belongs to Bourns' discrete semiconductor lineup. It is engineered for high-power applications where reliability and thermal stability are critical. The design supports complementary operation with PNP counterparts, facilitating efficient push-pull circuit architectures in audio and industrial power systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Bourns channels for current equivalent recommendations or updated series replacements.
