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Product Detailed Parameters
- Description：TRANS NPN 45V 2A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
- Current - Collector Cutoff (Max)：2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD3756STU is a single NPN silicon epitaxial planar bipolar junction transistor manufactured by onsemi. It is housed in a TO-126 through-hole package designed for high-current applications. The device supports a maximum collector current of 2 A and a power dissipation of 25 W. Key voltage ratings include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -55 °C to +150 °C, with a DC current gain (hFE) ranging from 40 to 375.
Feature Summary
- High current capability up to 2 A for robust switching performance
- Single NPN configuration optimized for general-purpose amplification
- Thermal stability supporting operation up to 150 °C junction temperature
Applications
- General-purpose switching circuits
- Power amplifier stages
- Industrial control systems
Procurement Notes
Verify the manufacturer marking matches onsemi or Fairchild specifications. Confirm the TO-126 package integrity and lead condition. Ensure the part number suffix aligns with current production status, as availability may vary. Request original datasheets to validate electrical parameters against design requirements before integration.
Selection Notes
Select this component when a single NPN transistor with 2 A continuous current capacity is required. The 45 V rating suits low-voltage switching environments. Consider the TO-126 package for through-hole mounting where higher thermal dissipation than smaller packages is necessary. Verify hFE binning if specific gain thresholds are critical for the application circuit.
Part Context
This part belongs to the family of power bipolar transistors offered by onsemi. It serves as a discrete semiconductor solution for medium-power applications. The TO-126 form factor distinguishes it from surface-mount alternatives, providing mechanical robustness for industrial and consumer electronics assemblies requiring reliable through-hole interconnection.
Replacement Considerations
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence for any alternative components.
