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Product Detailed Parameters
- Description：TRANS NPN 60V 2A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
- Current - Collector Cutoff (Max)：2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 150mA, 2V
- Power - Max：25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD37725STU is a single NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 2A. The device is housed in a TO-126-3 (TO-225AA) through-hole package, suitable for power applications. It has a maximum power dissipation of 25W and operates within a temperature range of -55°C to 150°C. Key electrical parameters include a minimum DC current gain of 150 at 150mA and a collector cutoff current of 2µA.
Feature Summary
- High power handling capability with 25W dissipation rating
- Medium-current switching performance with 2A collector current capacity
- Robust voltage tolerance up to 60V collector-emitter breakdown
- Extended thermal operation range supporting high-temperature environments
Applications
- Medium-power switching circuits
- Linear amplification stages
- Power regulation modules
- Industrial control systems
Procurement Notes
Verify the specific suffix 'STU' corresponds to the TO-126-3 package configuration. Confirm AEC-Q101 automotive qualification status if required for the target application. Ensure thermal management design accounts for the 25W power dissipation limit. Cross-reference pinout assignments with official datasheets before PCB layout finalization.
Selection Notes
Select this component for applications requiring moderate current switching with high power dissipation capabilities. Consider the TO-126-3 package for through-hole mounting requirements. Evaluate thermal resistance characteristics against ambient operating conditions. Compare current gain specifications against load drive requirements to ensure adequate saturation margins.
Part Context
This part belongs to onsemi's single bipolar transistor portfolio. It utilizes the TO-126-3 leaded package format. The device serves as a discrete semiconductor solution for power electronics. It complements other NPN transistors in the manufacturer's lineup for various voltage and current ratings.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements based on matching electrical parameters and package dimensions.
