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Product Detailed Parameters
- Description：TRANS NPN 80V 2A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 100mA, 1A
- Current - Collector Cutoff (Max)：2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 150mA, 2V
- Power - Max：25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD37925STU is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. It is housed in a TO-126-3 through-hole package and rated for a maximum collector current of 2 A and a collector-emitter voltage of 80 V. The device supports a total power dissipation of 25 W, making it suitable for medium-power switching and amplification applications. Key electrical characteristics include a DC current gain (hFE) range typically between 10 and 40 at specified test conditions, with a collector cutoff current (ICBO) maximum of 10 µA at 80 V. The component operates within a temperature range of -55°C to +150°C for the junction and -55°C to +175°C for storage.
Feature Summary
- NPN configuration optimized for general-purpose switching and linear amplifier circuits
- Robust thermal performance with 25 W power dissipation capability in TO-126-3 package
- High voltage tolerance up to 80 V for reliable operation in demanding environments
Applications
- General-purpose switching circuits
- Linear amplifier stages
- Power supply regulation modules
Procurement Notes
Verify the exact datasheet revision and hFE binning requirements against your specific circuit design needs. Confirm that the TO-126-3 lead form matches your PCB footprint. Ensure thermal management solutions are adequate for the expected power dissipation levels in your application environment.
Selection Notes
Select this component when an NPN BJT with 80 V rating and 2 A continuous current capacity is required. Consider the TO-126-3 package size constraints and thermal resistance characteristics. Compare hFE ranges and switching speeds against alternative transistors if high-frequency performance is critical for the target application.
Part Context
The BD37925STU belongs to onsemi's portfolio of discrete bipolar transistors. It shares similar electrical ratings with related models like the BD37916STU but may differ in specific gain bins or packaging variants. This part is designed for industrial and consumer electronics applications requiring reliable medium-power handling capabilities.
Replacement Considerations
Check for direct pin-compatible substitutes such as the BD37916STU, ensuring voltage and current ratings meet or exceed original requirements. Verify that any replacement maintains compatible hFE characteristics and thermal performance for the intended circuit topology.
