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The BD435 is an NPN epitaxial silicon power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 32 V and a continuous collector current rating of 4 A. The device supports a maximum collector dissipation of 36 W at a case temperature of 25°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 130 depending on operating conditions, and a transition frequency (fT) of 3 MHz. The component is housed in a TO-126 plastic package.
Verify the specific ordering suffix against official documentation to confirm the packing method. Suffixes such as 'S' indicate bulk packaging in the TO-126 format, while 'STU' indicates rail packaging. Ensure the selected variant matches the required supply configuration for the manufacturing process.
Select this component based on the 32 V collector-emitter voltage requirement and 4 A continuous current capability. Evaluate the thermal management strategy to ensure the 36 W dissipation limit is not exceeded without adequate heatsinking. Confirm that the hFE range meets the drive requirements for the intended circuit topology.
This part belongs to the BD43x series of NPN power transistors. It serves as the complementary counterpart to the BD436 PNP transistor. The series shares similar physical dimensions and mounting styles, facilitating push-pull configurations in audio and power conversion designs.
BD437
The maximum collector-emitter voltage (VCEO) for the BD435 is 32 V.
Yes, the datasheet explicitly states that this series is especially suitable for use in car-radio output stages.
The complementary PNP type for the BD435 is the BD436.