BD435

BD435

  • Description:TRANS NPN 32V 4A TO-126
  • Series:-

SKU:752af505055f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 32V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
  • Power - Max:36 W
  • Frequency - Transition:3MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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BD435

Overview

The BD435 is an NPN epitaxial silicon power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 32 V and a continuous collector current rating of 4 A. The device supports a maximum collector dissipation of 36 W at a case temperature of 25°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 130 depending on operating conditions, and a transition frequency (fT) of 3 MHz. The component is housed in a TO-126 plastic package.

Feature Summary

  • Designed for medium power linear and switching applications
  • Epitaxial silicon construction with high reliability
  • Complementary pairing available with PNP types

Applications

  • Medium power amplifier circuits
  • General purpose switching applications
  • Car-radio output stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the packing method. Suffixes such as 'S' indicate bulk packaging in the TO-126 format, while 'STU' indicates rail packaging. Ensure the selected variant matches the required supply configuration for the manufacturing process.

Selection Notes

Select this component based on the 32 V collector-emitter voltage requirement and 4 A continuous current capability. Evaluate the thermal management strategy to ensure the 36 W dissipation limit is not exceeded without adequate heatsinking. Confirm that the hFE range meets the drive requirements for the intended circuit topology.

Part Context

This part belongs to the BD43x series of NPN power transistors. It serves as the complementary counterpart to the BD436 PNP transistor. The series shares similar physical dimensions and mounting styles, facilitating push-pull configurations in audio and power conversion designs.

Replacement Considerations

BD437

FAQ

What is the maximum collector-emitter voltage for the BD435?

The maximum collector-emitter voltage (VCEO) for the BD435 is 32 V.

Is the BD435 suitable for use in car-radio output stages?

Yes, the datasheet explicitly states that this series is especially suitable for use in car-radio output stages.

What is the complementary PNP transistor for the BD435?

The complementary PNP type for the BD435 is the BD436.

BD435BD435

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