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Product Detailed Parameters
- Description：TRANS NPN 32V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk,Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 500mA, 1V
- Power - Max：36 W
- Frequency - Transition：3MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD435G is a silicon epitaxial-base NPN power transistor manufactured by onsemi. It is housed in a TO-225-3 (TO-92) plastic package designed for through-hole mounting. The device supports a maximum continuous collector current of 4 A and operates with a collector-emitter voltage of 45 V. Key electrical parameters include a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a power dissipation rating of 36 W. The component features a minimum DC current gain (hFE) of 30 and a transition frequency (fT) of 3 MHz. It functions within a temperature range from -55°C to +150°C.
Feature Summary
- Epitaxial base construction for reliable medium-power performance
- Lead-free packaging compliant with RoHS standards
- Designed for linear and switching applications
Applications
- Medium power amplifier circuits
- General purpose switching applications
- Car-radio output stages
Procurement Notes
Verify the specific datasheet revision and mechanical dimensions against the design requirements before integration. Confirm that the TO-225-3 package outline matches the PCB footprint. Ensure thermal management strategies account for the 36 W power dissipation capability under actual operating conditions. Check for any recent product change notifications regarding assembly or material composition updates.
Selection Notes
Select this component for designs requiring a robust NPN transistor with 4 A current handling in a compact plastic package. Consider the complementary PNP type BD438G if push-pull configurations are needed. Evaluate the thermal resistance characteristics relative to the expected load. Verify that the 45 V voltage rating provides sufficient margin for the circuit's peak operating voltages.
Part Context
The BD435G belongs to the BD43x series of silicon power transistors produced by onsemi. This series includes complementary NPN and PNP devices intended for medium-power applications. The BD435G specifically serves as the NPN counterpart in this lineup, offering standardized performance for general-purpose electronic designs.
Replacement Considerations
The complementary PNP transistor in the same series is the BD438G. Designers requiring a matched pair should verify the compatibility of these components for push-pull topologies.
