SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BD436T is a discontinued plastic medium-power silicon PNP transistor manufactured by onsemi. It features a collector-emitter voltage of 32 V and a maximum collector current of 4 A. The device dissipates up to 36 W at 25°C case temperature with a thermal resistance of 3.5 °C/W. It operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 85 minimum at 500 mA, a saturation voltage of 0.5 V at 2 A, and a transition frequency of 3 MHz. It utilizes the TO-225AA (TO-126) through-hole package.
Verify component authenticity carefully as this part is officially discontinued and no longer recommended for new designs. Sourcing may involve surplus distributors or secondary markets rather than direct manufacturer supply. Confirm manufacturing date codes and physical condition upon receipt. Ensure compatibility with existing PCB layouts using the TO-225AA package before procurement.
Select this component only for maintenance or replacement of existing equipment where design changes are not feasible. For new designs, consult the manufacturer for alternative recommendations as the device is obsolete. Verify that the 32 V collector-emitter rating meets the specific circuit requirements. Consider the thermal management capabilities required for the 36 W power dissipation limit.
This component belongs to a series of complementary silicon power transistors intended for medium power applications. The series includes various voltage ratings, with the BD436G representing the 32 V variant. The 'T' suffix typically denotes tube packaging, though availability varies. The broader family offers options ranging from 32 V to 80 V breakdown voltages.
Yes, the datasheet indicates that these devices are Pb-Free and RoHS compliant.
Pin 1 is the Emitter, Pin 2 and Pin 4 are the Collector, and Pin 3 is the Base.
The maximum base current (IB) is rated at 1.0 A dc.