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The BD436TG is a plastic medium-power silicon PNP transistor from onsemi, housed in a TO-225 (TO-126) package. It features a collector-emitter voltage of 32 Vdc and a continuous collector current of 4.0 Adc. The device supports a total power dissipation of 36 W at 25°C case temperature with a thermal resistance of 3.5 °C/W. Operating junction temperatures range from -55°C to +150°C.
Verify the specific ordering suffix 'T' against official documentation to confirm rail packaging specifications. Confirm RoHS compliance status and Pb-Free designation directly with the manufacturer or authorized distributors before procurement.
Select this component for designs requiring a 32 V PNP transistor with 4 A current capability. Ensure adequate heat sinking is provided to maintain case temperatures within limits for the specified 36 W power dissipation rating.
This part belongs to the BD4xx series of plastic, medium-power silicon PNP transistors. It serves as the complementary counterpart to the NPN BD437G device within the same family.
BD438G
The maximum collector-emitter voltage (VCEO) is 32 Vdc.
Yes, devices with the 'G' suffix are Pb-Free and RoHS Compliant.