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The BD437S is an NPN epitaxial silicon power transistor manufactured by onsemi, housed in a TO-126 package. It supports a maximum collector current of 4 A and a collector-emitter voltage of 45 V. The device handles up to 36 W of power dissipation at 25°C case temperature. Key electrical characteristics include a DC current gain ranging from 30 to 130 depending on operating conditions, a saturation voltage of 0.6 V maximum, and a transition frequency of 3 MHz.
Verify the specific ordering suffix 'S' corresponds to the TO-126 bulk packaging configuration. Confirm that the component is sourced from authorized distributors to ensure authenticity, as counterfeit parts may exhibit substandard performance or failed applications. Cross-reference the datasheet revision with the manufacturer's official website for any updates regarding product status or pinout definitions.
Select this component when a robust NPN power transistor with a 45 V rating and 4 A continuous current capability is required. Ensure the application design accommodates the specified 36 W thermal dissipation limits at the intended case temperature. Consider the complementary BD438 if a matched PNP pair is needed for push-pull configurations.
This part belongs to the BD433/435/437 series of NPN epitaxial silicon transistors. The BD437 variant specifically offers a 45 V breakdown voltage, distinguishing it from the lower-voltage BD433 (22 V) and BD435 (32 V). The series is intended for general-purpose medium power applications within the semiconductor portfolio.
BD437STU