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The BD437T is an NPN epitaxial silicon power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) rating of 4 A. The device supports a maximum collector dissipation of 36 W at 25°C case temperature and operates with a junction temperature up to 150°C. Packaged in a TO-126 format, it provides a minimum DC current gain (hFE) of 30 at 2A and includes a complementary PNP counterpart.
Verify the specific ordering suffix against official documentation to confirm package type and packing method. Confirm that the component meets RoHS compliance requirements for your region. Ensure the supplier source is authorized to prevent counterfeit parts. Validate that the part status matches your production timeline needs.
Select this component when a 45 V NPN power transistor is required for medium power tasks. Consider the complementary BD438 if a matched pair is needed. Evaluate thermal management capabilities as the device dissipates significant heat. Verify that the TO-126 package fits the mechanical constraints of the design.
This transistor belongs to the BD43x series, which includes BD433, BD435, and BD437 variants. These devices share similar physical packaging but differ in voltage ratings. The BD437 specifically targets the 45 V application range within this family of NPN epitaxial transistors.
BD437S
The BD438 is the complementary PNP transistor designed to pair with the BD437.
The maximum continuous DC collector current is rated at 4 A.