ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 45V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 300mA, 3A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：85 @ 500mA, 1V
- Power - Max：36 W
- Frequency - Transition：3MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
Download product information
Overview
The BD438 is a plastic medium-power silicon PNP transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 Vdc and a maximum continuous collector current (IC) of 4.0 Adc. The device supports a total power dissipation of 36 W at 25°C case temperature, with a thermal resistance junction-to-case of 3.5 °C/W. Operating temperatures range from -55°C to +150°C. It utilizes the TO-225 package.
Feature Summary
- Designed for amplifier and switching applications
- RoHS compliant and lead-free construction
Applications
- Amplifier circuits
- Switching applications
Procurement Notes
Verify component authenticity through official onsemi channels or authorized distributors. Confirm RoHS compliance status and Pb-Free packaging details against the latest datasheet revision. Ensure proper handling procedures are followed during installation to maintain device reliability and performance specifications.
Selection Notes
Select this component based on required PNP polarity, 45 V collector-emitter voltage rating, and 4.0 A current capacity. Evaluate thermal management requirements considering the 36 W power dissipation limit and 3.5 °C/W thermal resistance. Verify compatibility with the TO-225 package style for the specific circuit design constraints.
Part Context
This part belongs to a series of plastic medium-power silicon PNP transistors including BD436G, BD440G, and BD442G. These devices share similar structural characteristics but differ in voltage ratings. Complementary NPN types in this family include BD437 and BD441.
Replacement Considerations
BD436G, BD440G, BD442G
FAQ
What is the maximum collector-emitter voltage for the BD438?
The maximum collector-emitter voltage (VCEO) for the BD438 is 45 Vdc.
Is the BD438 suitable for high-temperature environments?
Yes, the operating and storage junction temperature range extends up to +150°C.
What is the typical DC current gain at low currents?
At IC = 10 mA and VCE = 5.0 V, the minimum DC current gain (hFE) is 30.
