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Product Detailed Parameters
- Description：TRANS PNP 60V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 300mA, 3A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 500mA, 1V
- Power - Max：36 W
- Frequency - Transition：3MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The onsemi BD440G is a plastic medium-power silicon PNP transistor designed for amplifier and switching applications. It operates within a collector-emitter voltage (VCEO) of 60 Vdc and supports a continuous collector current (IC) of 4.0 Adc. The device dissipates up to 36 W at a case temperature of 25°C, with a thermal resistance from junction to case of 13°C/W. Electrical characteristics include a DC current gain (hFE) ranging from 20 to 475 depending on the operating current, a collector saturation voltage (VCE(sat)) of 0.8 Vdc at high currents, and a current-gain bandwidth product (fT) of 3.0 MHz. The component functions reliably across an operating and storage junction temperature range of –55 to +150°C.
Feature Summary
- Epitaxial planar silicon construction optimized for linear and switching operations
- Low collector-emitter saturation voltage for efficient power handling
- Lead-free packaging compliant with RoHS standards
Applications
- Amplifier circuits
- Switching applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm package style and shipping configuration. Confirm compliance requirements such as lead-free status and RoHS directives prior to procurement. Ensure that the selected variant matches the required voltage rating and thermal dissipation capabilities for the intended design environment.
Selection Notes
Select the BD440G when a 60 Vdc collector-emitter breakdown voltage and 4 A continuous current capacity are required. Evaluate the thermal management strategy based on the 13°C/W junction-to-case thermal resistance and the 36 W maximum power dissipation limit. Consider the complementary NPN type BD439G if push-pull configurations are necessary for the circuit design.
Part Context
The BD440G belongs to the BD4xx series of plastic medium-power silicon PNP transistors manufactured by onsemi. This family includes variants with different voltage ratings, specifically the BD436G (32 V), BD438G (45 V), and BD442G (80 V). All devices in this series share similar physical dimensions and electrical characteristics regarding current handling and power dissipation.
Replacement Considerations
The datasheet identifies the BD439G as the complementary NPN type. No other direct substitute part numbers are documented in the provided source material.
