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The BD440G is a plastic medium-power silicon PNP transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 60 Vdc and a maximum collector current (IC) of 4.0 Adc. The device supports a total device dissipation of 36 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 3.5 °C/W. It operates within a junction and storage temperature range of -55 to +150°C. The component utilizes a TO-225 package and is RoHS compliant.
Verify the specific datasheet revision and ordering information directly from official onsemi documentation before procurement. Confirm that the TO-225 package style matches the design requirements. Ensure compliance with environmental standards such as RoHS if applicable to the final assembly. Check for any discontinuation notices or recommended new design alternatives provided by the manufacturer.
Select the BD440G when a 60 V collector-emitter voltage rating is required for PNP switching or amplification tasks. Consider the 4 A continuous collector current capability and the 36 W power dissipation limit at 25°C case temperature. Evaluate the thermal resistance of 3.5 °C/W for heat sink requirements. Compare against complementary NPN types like BD441 for push-pull configurations.
The BD440G belongs to a series of plastic medium-power silicon PNP transistors produced by onsemi. This family includes variants with different voltage ratings, specifically BD436G, BD438G, and BD442G. These components are designed to provide reliable performance in general-purpose linear and switching applications within electronic circuits.
BD442G