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The BD442 is a PNP power transistor manufactured by STMicroelectronics using planar technology with a Base Island layout. It operates in a SOT-32 (TO-126) package. Key electrical parameters include a collector-base voltage of -80 V, collector-emitter voltage of -80 V, and emitter-base voltage of -5 V. The maximum continuous collector current is -4 A, with a peak current of -7 A for pulses under 10 ms. Total power dissipation reaches 36 W at a case temperature of 25 °C. DC current gain ranges from 15 to 140 depending on operating conditions.
Verify the specific manufacturer designation as the BD442 is an STMicroelectronics product. Confirm the package type matches the required SOT-32 form factor. Ensure the application environment stays within the specified junction temperature limits of 150 °C. Check RoHS compliance status if environmental regulations apply to the final assembly. Validate that the component meets the absolute maximum ratings for your circuit design.
Select this component when a PNP power transistor with high gain and low saturation voltage is required. The BD442 complements the NPN BD441 device. Consider the thermal management requirements given the 36 W power dissipation capability. Verify that the -80 V voltage rating suits the system's supply rails. Evaluate the SOT-32 package constraints against available board space.
This device belongs to the family of PNP power transistors produced by STMicroelectronics. It utilizes planar technology combined with a Base Island layout to achieve superior electrical characteristics. The complementary NPN version of this device is the BD441. These transistors are designed for robust performance in industrial applications requiring reliable switching and linear operation.
The complementary NPN type is BD441. No direct substitute part numbers are confirmed in the provided documentation.