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Product Detailed Parameters
- Description：TRANS PNP 80V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk,Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 300mA, 3A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 500mA, 1V
- Power - Max：36 W
- Frequency - Transition：3MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD442G is a plastic medium-power silicon PNP transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 80 V and a continuous collector current of 4 A. The device dissipates up to 36 W at 25°C case temperature with a thermal resistance of 3.5 °C/W. Electrical characteristics include a minimum DC current gain of 15 at 2.0 A, a saturation voltage of 0.8 V max at 3.0 A, and a transition frequency of 3 MHz. It operates within a junction temperature range of -55°C to +150°C and utilizes the TO-225AA (TO-126) through-hole package.
Feature Summary
- High power dissipation capability of 36 W for robust thermal performance
- Low saturation voltage to minimize energy loss during switching
- High current gain suitable for efficient amplification and driving applications
Applications
- Amplifier circuits
- Switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package style and shipping configuration. Confirm RoHS compliance status and Pb-Free designation requirements for the target assembly process. Ensure the component meets environmental regulations applicable to the final product deployment region before procurement.
Selection Notes
Select this component when an 80 V PNP rating is required for medium-power tasks. Evaluate the thermal management strategy to maintain junction temperatures within the specified operating range. Compare the 4 A current limit and 36 W power dissipation against circuit load demands to ensure adequate safety margins.
Part Context
This device belongs to the BD4xx series of plastic medium-power silicon PNP transistors. Complementary NPN types in this family include the BD437 and BD441. The series utilizes Planar technology with a Base Island layout to achieve high gain and low saturation voltage characteristics.
Replacement Considerations
Consult official manufacturer resources for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or generic specifications.
