BD442STU

BD442STU

$0.13
  • Description:TRANS PNP 80V 4A TO-126-3
  • Series:-

SKU:47b2354bcea9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 80V 4A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube,Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 1V
  • Power - Max:36 W
  • Frequency - Transition:3MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

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BD442STU

Overview

The BD442STU is a PNP silicon epitaxial planar transistor manufactured by onsemi. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 80 V. The device is housed in a TO-126-3 through-hole package with a power dissipation capacity of 36 W. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a collector-emitter saturation voltage of 800 mV. The gain-bandwidth product is 3 MHz, with a minimum DC current gain (hFE) of 40. Operating temperatures range from -65°C to +150°C.

Feature Summary

  • PNP polarity configuration for single-ended switching applications
  • High current handling capability up to 4 A continuous collector current
  • Robust thermal performance with 36 W power dissipation in TO-126 package

Applications

  • General-purpose high-current switching circuits
  • Power amplifier output stages
  • Motor control driver interfaces

Procurement Notes

Verify component authenticity against official onsemi documentation due to discontinued status. Confirm RoHS compliance details via manufacturer material declarations. Ensure the TO-126-3 package variant matches design requirements. Cross-reference datasheet revisions for any parameter updates prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring PNP bipolar junction transistors with moderate voltage ratings and high current capacity. The TO-126 package facilitates through-hole mounting for robust mechanical connections. Consider thermal management strategies given the 36 W dissipation rating. Verify that the 80 V breakdown voltage aligns with circuit supply constraints.

Part Context

The BD442STU belongs to the BD442 series of PNP transistors produced by onsemi. It serves as a discontinuation-status alternative to active variants like the BD442G. The series is designed for general-purpose power switching applications requiring reliable bipolar transistor performance in standard through-hole packages.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in verified sources. The BD442G shares similar electrical characteristics but differs in packaging and manufacturing lot specifications. Evaluate pinout compatibility and thermal resistance differences when considering cross-references.

BD442STUBD442STU
$0.13
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