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The BD442STU is a PNP silicon epitaxial planar transistor manufactured by onsemi. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 80 V. The device is housed in a TO-126-3 through-hole package with a power dissipation capacity of 36 W. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a collector-emitter saturation voltage of 800 mV. The gain-bandwidth product is 3 MHz, with a minimum DC current gain (hFE) of 40. Operating temperatures range from -65°C to +150°C.
Verify component authenticity against official onsemi documentation due to discontinued status. Confirm RoHS compliance details via manufacturer material declarations. Ensure the TO-126-3 package variant matches design requirements. Cross-reference datasheet revisions for any parameter updates prior to integration into final assemblies.
Select this component for designs requiring PNP bipolar junction transistors with moderate voltage ratings and high current capacity. The TO-126 package facilitates through-hole mounting for robust mechanical connections. Consider thermal management strategies given the 36 W dissipation rating. Verify that the 80 V breakdown voltage aligns with circuit supply constraints.
The BD442STU belongs to the BD442 series of PNP transistors produced by onsemi. It serves as a discontinuation-status alternative to active variants like the BD442G. The series is designed for general-purpose power switching applications requiring reliable bipolar transistor performance in standard through-hole packages.
Publicly confirmed substitute part numbers are not available in verified sources. The BD442G shares similar electrical characteristics but differs in packaging and manufacturing lot specifications. Evaluate pinout compatibility and thermal resistance differences when considering cross-references.