BD535

Overview

The BD535 is an NPN silicon power transistor manufactured using Planar technology with a Base Island layout. It provides high gain performance and low saturation voltage in a TO-220 package. Key electrical ratings include a collector-emitter voltage of 60 V, a continuous collector current of 8 A, and a total dissipation of 50 W at 25°C case temperature. The device supports a maximum junction temperature of 150°C.

Feature Summary

• Manufactured using Planar technology with a Base Island layout for enhanced performance
• Delivers exceptional high DC current gain coupled with very low saturation voltage
• Designed for medium power linear and switching applications

Applications

• Medium power linear amplifier circuits
• General purpose switching applications
• Audio output stages

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the component meets the required RoHS compliance standards for your assembly process. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during installation.

Selection Notes

Select this component when a robust NPN power transistor with high current capability is required. The 60 V rating suits general industrial applications. Verify thermal management requirements against the 50 W dissipation limit at the expected operating case temperature.

Part Context

The BD535 belongs to a complementary series of power transistors alongside the BD533, BD534, BD536, and BD537. This family shares similar physical packaging and manufacturing technologies but varies in breakdown voltage ratings to suit different circuit requirements.

Replacement Considerations

The BD533 serves as a lower voltage alternative within the same series. Designers should verify that the 45 V rating of the BD533 is sufficient for the specific application before substituting.