SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BD536J is a power bipolar transistor manufactured by onsemi, formerly Harris Semiconductor. It is a single-element PNP silicon device housed in a TO-220AB flange mount package with three through-hole terminals. The component supports a maximum collector current of 8A and a collector-emitter breakdown voltage of 60V. It features a maximum power dissipation of 50W and an operating junction temperature up to 150°C. The transistor is designed for switching applications and connects via its collector terminal.
Verify the manufacturer origin carefully, as this part was originally produced by Harris Semiconductor before its acquisition by onsemi. Confirm that the specific BD536J suffix corresponds to the TO-220AB package variant. Check for availability status as legacy components may have limited supply chains or require alternative sourcing strategies from authorized distributors.
Select this component when a robust PNP power transistor is required for high-current switching tasks. Ensure the circuit design accommodates the 60V collector-emitter voltage limit and the 8A continuous current rating. The TO-220AB package necessitates appropriate heatsinking solutions to maintain junction temperatures within the specified 150°C operational range during high-power dissipation events.
This device belongs to the broader family of power bipolar transistors used in discrete semiconductor applications. Originally developed by Harris Semiconductor, it represents a standard solution for medium-power switching requirements. The transition to onsemi manufacturing maintains the original electrical specifications while potentially updating production processes or packaging standards under the new corporate ownership structure.
The BD536 is a verified substitute part number with identical electrical characteristics and pinout compatibility.