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The BD538J is a PNP silicon power transistor manufactured by onsemi, housed in a TO-220AB flange mount package. It features a maximum collector current of 8 A and a collector-emitter voltage rating of 80 V. The device has a minimum DC current gain (hFE) of 15 and supports a maximum operating temperature of 150 °C. With a maximum power dissipation environment of 50 W, it utilizes through-hole terminals for single-side mounting. The component is designed for high-current applications requiring robust thermal performance and reliable switching capabilities.
Verify the manufacturer origin, as the BD538 series was originally developed by Intersil before being acquired by onsemi. Ensure the specific suffix matches the required pinout and thermal characteristics. Confirm RoHS compliance status for the specific production lot, as older stock may differ from current manufacturing runs. Cross-reference datasheet revisions to ensure parameter consistency with design requirements.
Select this component when a PNP bipolar junction transistor is required for medium-power applications. The 80 V rating suits low-to-medium voltage systems. Consider the TO-220AB package for its balance of current handling and thermal management. Verify that the 8 A continuous current capability aligns with the load requirements. Evaluate the hFE minimum of 15 for base drive calculations in saturation modes.
The BD538J belongs to the broader BD538 family of power transistors. This series is characterized by high current capacity and rugged construction suitable for industrial environments. The transition from Intersil to onsemi maintains the technical specifications while updating supply chain documentation. The part serves as a standard solution for general-purpose power switching tasks.
Consult official cross-reference lists for direct substitutes. Generic replacements must match the 8A/80V/PNP/TO-220 parameters precisely.
The maximum collector-emitter voltage is 80 V.
It uses a TO-220AB flange mount package with through-hole terminals.