BD540C-S

Overview

The BD540C-S is a PNP bipolar junction transistor manufactured by Bourns. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 5 A. The device is housed in a TO-220AB plastic package with three terminals, where the case is connected to the collector. It supports a maximum operating temperature of 150 °C and has a minimum DC current gain (hFE) of 12.

Feature Summary

• Single PNP configuration for discrete switching applications
• Collector-connected case for efficient thermal dissipation
• Lead-free construction compliant with RoHS standards

Applications

• General-purpose power switching circuits
• High-current load control systems
• Discrete amplifier stages requiring PNP topology

Procurement Notes

Verify component authenticity through authorized Bourns distributors or direct channels. Confirm the specific suffix matches the required electrical characteristics. Ensure the TO-220AB package dimensions align with the target PCB footprint. Validate RoHS compliance documentation if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a single PNP transistor with 5 A current capacity and 100 V breakdown voltage is required. The TO-220AB package facilitates heatsinking for high-power dissipation scenarios. Consider the minimum hFE of 12 for base drive calculations in saturation applications.

Part Context

This part belongs to Bourns' discrete semiconductor portfolio, specifically within the bipolar transistor category. It serves as a standalone switching element distinct from integrated driver ICs or Darlington arrays. The TO-220AB form factor is standard for through-hole mounting in industrial and consumer electronics.

Replacement Considerations

Cross-reference with other PNP transistors rated for 100 V and 5 A in TO-220 packages. Verify pinout compatibility and thermal resistance values before substitution.