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Product Detailed Parameters
- Description：TRANS NPN 80V 8A TO-220
- Series：-
- Mfr：Bourns Inc.
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 1.6A, 8A
- Current - Collector Cutoff (Max)：700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5A, 4V
- Power - Max：2 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD543B-S is an NPN silicon bipolar junction transistor (BJT) manufactured by Bourns Inc. It is housed in a TO-220AB flange mount package with three terminals. The device supports a maximum collector current of 8 A and a collector-emitter voltage of 80 V. It features a minimum DC current gain (hFE) of 15 and can operate at temperatures up to 150 °C. The component has a single configuration and connects the case to the collector. It is not RoHS compliant.
Feature Summary
- NPN silicon construction for standard switching and amplification
- Flange mount package design facilitating direct heatsink attachment
- Collector-connected case for efficient thermal dissipation
Applications
- Power switching circuits
- Amplifier stages
- General-purpose electronic control systems
Procurement Notes
Verify RoHS compliance status prior to procurement, as this specific part number is identified as non-compliant. Confirm that the TO-220AB flange mount package meets mechanical constraints. Ensure the 80 V and 8 A ratings align with circuit requirements. Check for leaded content restrictions if applicable to the final assembly standards.
Selection Notes
Select this component when a robust NPN transistor with high power handling is required. The TO-220AB package allows for effective heat management via mounting hardware. Consider the 80 V breakdown voltage and 8 A continuous current limits against peak load conditions. Verify that the non-RoHS status is acceptable for the target market regulations.
Part Context
This component belongs to the Bourns Inc. discrete semiconductor lineup, specifically within the bipolar transistor category. It utilizes silicon technology for reliable operation in moderate to high-power applications. The manufacturer provides datasheet documentation detailing absolute maximum ratings and electrical characteristics for design integration.
Replacement Considerations
Consult official Bourns documentation or authorized distributor databases for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and package dimensions before substitution. Generic equivalents may not match the specific flange mount or electrical parameters.
