BD543C-S

BD543C-S

  • Description:TRANS NPN 100V 8A TO-220
  • Series:-

SKU:3a062f2188d8 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 100V 8A TO-220
  • Series:-
  • Mfr:Bourns Inc.
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 1.6A, 8A
  • Current - Collector Cutoff (Max):700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5A, 4V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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BD543C-S

Overview

The BD543C-S is a single NPN silicon power transistor manufactured by Bourns Inc. It is designed for general-purpose switching and amplification applications requiring high voltage and current handling capabilities. The device features a collector-emitter voltage rating of 100V and a continuous collector current capacity of 8A. It utilizes a TO-220 package, which facilitates effective thermal dissipation for power electronics designs. This component belongs to the Bipolar (BJT) - Single category within discrete semiconductor products.

Feature Summary

  • NPN silicon construction for robust power switching
  • High current capability suitable for demanding loads
  • TO-220 through-hole package for efficient heat management

Applications

  • General-purpose power switching circuits
  • Amplifier stages in audio or signal processing equipment
  • Relay driver interfaces
  • Motor control logic gates

Procurement Notes

Verify availability status carefully as this specific part number may be obsolete. Confirm exact pinout compatibility with existing PCB footprints before ordering. Check for updated revision codes if sourcing from secondary markets. Ensure supplier provides genuine manufacturer documentation to avoid counterfeit components. Validate thermal requirements against system design constraints prior to procurement.

Selection Notes

Evaluate thermal resistance characteristics to ensure adequate heat sinking for the intended operating environment. Compare gain bandwidth product requirements against circuit frequency specifications. Consider alternative packages if space constraints differ from standard TO-220 dimensions. Verify base drive current capabilities match available control signals. Assess saturation voltage limits for efficiency calculations in low-dropout scenarios.

Part Context

This component is classified under Discrete Semiconductor Products, specifically Transistors - Bipolar (BJT) - Single. It serves as a fundamental building block for analog and digital power control systems. The TO-220 form factor distinguishes it from surface-mount alternatives, offering superior thermal performance for higher power dissipation needs compared to smaller packages.

Replacement Considerations

BD239C is listed as a similar substitute option. Verify electrical parameter equivalence before implementation. Cross-reference pin configurations to ensure mechanical compatibility. Review datasheet specifications for both devices to confirm functional parity in the target application.

BD543C-SBD543C-S

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