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The BD544A-S is a PNP silicon power transistor manufactured by Bourns Inc., designed for switching and amplification applications. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 8A. The device is housed in a TO-220-3 package with the mounting base electrically connected to pin 2. It supports an operating junction temperature range from -65°C to 150°C and offers a power dissipation capacity of 70W at a 25°C case temperature.
Verify the specific suffix 'S' against the manufacturer's official documentation to confirm exact electrical tolerances and marking codes, as variations may exist within the product line. Ensure the procurement channel provides valid traceability for the component. Confirm that the TO-220-3 package dimensions match the target PCB footprint requirements before finalizing orders.
Select this component when a PNP power transistor with 60V breakdown and 8A current capability is required. Consider the TO-220-3 package for through-hole assembly needs. Evaluate thermal management solutions to maintain junction temperatures within the specified -65°C to 150°C range during operation. Verify compatibility with complementary NPN devices like the BD543 series if used in push-pull configurations.
This part belongs to the family of bipolar junction transistors (BJT) produced by Bourns Inc. It serves as a high-power discrete semiconductor device intended for industrial and consumer electronics. The component is distinct from Bourns' passive components such as resistors, fuses, and thermistors, focusing solely on active signal and power control functions.
Public confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference databases or manufacturer engineering support for verified alternatives.