SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BD675 is a plastic medium-power NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a single configuration with a maximum collector-emitter voltage (VCEO) of 45 V and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum continuous DC collector current of 4 A and offers a minimum DC current gain (hFE) of 750. Power dissipation reaches 40 W, with a maximum operating temperature of +150°C. It is housed in a TO-126 through-hole package.
Verify component authenticity and datasheet revision status due to the part's discontinued lifecycle. Confirm RoHS compliance details via official material composition declarations. Ensure sourcing channels provide valid traceability documentation for legacy components.
Select this component for designs requiring high current gain and moderate power dissipation in a through-hole format. Consider thermal management requirements given the 40 W dissipation rating. Verify that the 45 V voltage rating aligns with the specific circuit operating conditions.
The BD675 belongs to the BD675A series of plastic medium-power silicon NPN Darlingtons. It serves as a legacy discrete semiconductor solution from onsemi, historically utilized in analog and switching applications before being superseded by newer integrated solutions.
BD675AS is a verified substitute part number within the same family.