BD675AG

Overview

The BD675AG is a single NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 45 V and a maximum DC collector current of 4 A. The device has a power dissipation rating of 40 W at 25°C ambient temperature. Key electrical parameters include a minimum DC current gain (hFE) of 750 and a maximum collector cutoff current of 200 µA. The emitter-base voltage (VEBO) is rated at 5 V, while the collector-base voltage (VCBO) is 45 V. It is housed in a TO-126 through-hole package with a maximum operating junction temperature of +150°C.

Feature Summary

• High current gain capability for efficient driver applications
• Robust medium-power handling with 40 W dissipation
• Designed for through-hole mounting in industrial environments

Applications

• General-purpose switching circuits
• Relay drivers
• Motor control interfaces

Procurement Notes

Verify component authenticity against official onsemi datasheets due to potential legacy manufacturing variations. Confirm RoHS compliance status as the part may be subject to end-of-life restrictions. Ensure the TO-126 package dimensions match your PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component when high input impedance and substantial output current are required in a single package. The TO-126 form factor suits applications needing robust thermal management via heatsinking. Consider complementary PNP variants if push-pull configurations are necessary for the specific circuit topology.

Part Context

This device belongs to the BD675 series of plastic medium-power silicon NPN Darlington transistors. It is designed to provide high current gain and reliable performance in various electronic applications. The series is known for its ruggedness and suitability for general-purpose switching tasks in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers: BD675AS, BD675G.