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The BD675G is a plastic medium-power silicon NPN Darlington transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) rating of 4.0 A. The device operates within a junction temperature range of -55°C to +150°C and offers a minimum DC current gain (hFE) of 750 at IC = 1.5 A and VCE = 3.0 V. Packaged in the TO-225 (Case 77-09) style, it provides a thermal resistance from junction to case of 3.13 °C/W.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the package marking matches the specified TO-225 style and includes the Pb-Free indicator. Ensure the ordering suffix 'G' corresponds to the correct lead-free packaging configuration before finalizing procurement.
Select this component for designs requiring high current gain and robust power handling capabilities. Verify that the 45 V collector-emitter voltage meets the circuit requirements. Consider the thermal resistance characteristics when designing heat dissipation solutions for the TO-225 package.
This device belongs to the BD67x series of plastic medium-power silicon NPN Darlingtons. It is part of a family that includes variants with higher voltage ratings such as the BD677G (60 V), BD679G (80 V), and BD681G (100 V). The series is designed for general-purpose amplification tasks.
The datasheet notes that these devices are not recommended for new design. Equivalent parts include MJE800, MJE801, MJE802, and MJE803.