BD677

BD677

$0.67
  • Description:TRANS NPN DARL 60V 4A SOT-32-3
  • Series:-

SKU:ec18296bf241 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN DARL 60V 4A SOT-32-3
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:SOT-32-3
  • Grade:-
  • Qualification:-

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BD677

Overview

The BD677 is an NPN power Darlington transistor manufactured using planar base island technology. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. The device offers good hFE linearity and high fT frequency characteristics, making it suitable for applications requiring robust switching and amplification capabilities within the STMicroelectronics Darlington transistor portfolio.

Feature Summary

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • Good hFE linearity
  • High fT frequency

Applications

  • Power switching applications
  • Amplifier circuits
  • General purpose transistor applications

Procurement Notes

Verify the specific part number against official STMicroelectronics documentation to ensure compatibility with your design requirements. Confirm that the component status is listed as Active in current product catalogs. Check for any specific ordering suffixes that may indicate package variations or tape-and-reel options, ensuring they match your manufacturing needs exactly.

Selection Notes

Select this component when a high-gain NPN power transistor with integrated protection is required. Consider its planar base island technology for reliability. Evaluate if the integrated antiparallel diode meets your circuit's flyback protection needs without external components. Ensure the high fT frequency aligns with your signal processing speed requirements.

Part Context

This component belongs to STMicroelectronics' broader Darlington transistor portfolio, which includes devices with voltage ranges up to 400 V and both NPN and PNP polarities. The BD677 specifically utilizes planar base island technology, a manufacturing process designed to enhance performance and reliability for power applications compared to older technologies.

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