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Product Detailed Parameters
- Description：TRANS NPN DARL 60V 4A SOT-32-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：SOT-32-3
- Grade：-
- Qualification：-
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Overview
The BD677A is an NPN power Darlington transistor manufactured by STMicroelectronics using planar base island technology. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum collector-base voltage (VCBO) of 60 V, and a maximum emitter-base voltage (VEBO) of 5 V. The device supports a maximum continuous DC collector current of 4 A with a minimum DC current gain (hFE) of 750. Power dissipation is rated at 40 W, and it operates within a temperature range of -65 °C to +150 °C. The component is housed in a SOT-32-3 package for through-hole mounting.
Feature Summary
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- High fT frequency performance
- Good hFE linearity
Applications
- Power switching applications requiring high current gain
- Motor control circuits
- Relay driver stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and variant selection. Confirm RoHS compliance status directly from the product documentation. Check for any recent Product Change Notifications (PCNs) that may affect pinout or material composition. Ensure the supplier provides traceable documentation matching the STMicroelectronics part number BD677A.
Selection Notes
Select this component when a single NPN transistor with high current handling capability and built-in flyback protection is required. The integrated antiparallel diode simplifies circuit design for inductive loads. Consider the SOT-32-3 package constraints for thermal management and PCB space. Verify that the 60 V voltage rating meets the system's peak operating conditions.
Part Context
The BD677A belongs to the BD677 series of complementary silicon power Darlington transistors offered by STMicroelectronics. This series utilizes planar base island technology to achieve robust performance in power switching applications. The device is designed for general-purpose use where high current gain and moderate voltage ratings are sufficient.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements must match the NPN polarity, 4 A current rating, 60 V voltage rating, and SOT-32-3 package dimensions.
