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Product Detailed Parameters
- Description：TRANS PNP DARL 60V 4A SOT-32-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：SOT-32-3
- Grade：-
- Qualification：-
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Overview
The BD678A is a PNP power Darlington transistor manufactured using planar base island technology. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. The device is characterized by good hFE linearity and high fT frequency, making it suitable for high-frequency power switching applications.
Feature Summary
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- Good hFE linearity
- High fT frequency
Applications
Procurement Notes
Verify the specific part number BD678A against official STMicroelectronics documentation to confirm availability and exact specifications. Ensure compatibility with existing circuit designs regarding voltage ratings and thermal requirements before procurement.
Selection Notes
Select this component for applications requiring high current gain and fast switching speeds in PNP configurations. Consider the integrated antiparallel diode for inductive load driving where freewheeling paths are needed without external components.
Part Context
The BD678A belongs to STMicroelectronics' portfolio of complementary silicon power Darlington transistors. It is the PNP counterpart to NPN variants like the BD677A, offering similar performance characteristics within a unified product family designed for robust power handling.
Replacement Considerations
Check for direct substitutes such as the BD677A if NPN polarity is acceptable or if the circuit design allows for polarity inversion. Verify pinout compatibility and electrical parameters against alternative PNP Darlington transistors from other manufacturers.
FAQ
What type of configuration does the BD678A use?
It uses a monolithic Darlington configuration.
Does the BD678A include an internal diode?
Yes, it has an integrated antiparallel collector-emitter diode.
What manufacturing technology is used for the BD678A?
It is manufactured in planar base island technology.
