BD678AG

Description：TRANS PNP DARL 60V 4A TO-126
Series：-

SKU:3c69658e2286 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP DARL 60V 4A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)：500µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD678AG

Overview

The BD678AG is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with a collector-emitter voltage rating of 60 Vdc and a continuous collector current capacity of 4.0 Adc. The device supports a total power dissipation of 40 W at a case temperature of 25 °C, derating linearly above this threshold. Electrical characteristics include a minimum DC current gain (hFE) of 750 under specified test conditions and a maximum collector-emitter saturation voltage of 2.8 Vdc. The component operates within a junction temperature range of -55 to +150 °C.

Feature Summary

Monolithic construction providing high DC current gain for general-purpose amplifier applications
Integrated antiparallel collector-emitter diode structure inherent to the Darlington configuration
Pb-Free packaging compliant with RoHS standards

Applications

Output devices in complementary general-purpose amplifier circuits
High-gain switching applications requiring robust current handling
Complementary pairs utilizing NPN counterparts such as the BD677A

Procurement Notes

Verify the specific ordering suffix 'AG' against the manufacturer's current product status documentation. Confirm that the TO-225 package style matches the required mechanical footprint and pinout orientation for the target PCB design. Ensure compliance with the stated thermal resistance parameters during system-level heat dissipation planning.

Selection Notes

Select this component when a PNP output stage requires a collector-emitter voltage rating of 60 V and a continuous current capability of 4 A. The high hFE characteristic simplifies base drive requirements compared to standard bipolar transistors. Consider the thermal management constraints imposed by the 3.13 °C/W junction-to-case resistance for reliable operation near the upper temperature limits.

Part Context

This device belongs to the BD67x series of plastic medium-power silicon PNP Darlingtons from onsemi. It serves as the complementary counterpart to the BD677A NPN transistor. The series includes variants with different voltage ratings, specifically the BD676 (45 V), BD678 (60 V), BD680 (80 V), and BD682 (100 V).