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Product Detailed Parameters
- Description：TRANS PNP DARL 60V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD678G is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with a high DC current gain of 750 (minimum) at collector currents of 1.5 A and 2.0 A. The device supports a collector-emitter voltage of 60 Vdc and a continuous collector current of 4.0 Adc. Total device dissipation reaches 40 W at a case temperature of 25 °C, with a thermal resistance junction-to-case of 3.13 °C/W. Operating and storage junction temperatures range from -55 to +150 °C.
Feature Summary
- Monolithic Darlington configuration providing high DC current gain
- Integrated antiparallel collector-emitter diode for protection
- High transition frequency suitable for general-purpose amplifier applications
Applications
- Complementary general-purpose amplifier output devices
- Power switching circuits requiring high gain
- Audio amplification stages
Procurement Notes
Verify the specific part number against the manufacturer's official ordering information to confirm availability status. Some variants within this series may be discontinued or not recommended for new designs. Ensure compliance with RoHS standards and Pb-free package requirements as specified in the datasheet before procurement.
Selection Notes
Select the BD678G when a PNP Darlington transistor with a 60 V collector-emitter rating and 4.0 A current capacity is required. Consider the TO-225 package style for through-hole mounting. Evaluate thermal management needs based on the 40 W power dissipation limit at 25 °C case temperature and the derating curve provided in the documentation.
Part Context
The BD678G belongs to a family of plastic medium-power silicon PNP Darlingtons that includes complementary NPN counterparts like the BD677G. This series is designed for robust performance in amplifier and switching applications. The device is equivalent to older MJE 701 specifications, facilitating legacy design replacements.
Replacement Considerations
The BD678G is electrically equivalent to the MJE 701 transistor. Designers replacing existing MJE 701 components can utilize the BD678G directly, ensuring compatibility with established circuit topologies while benefiting from modern manufacturing processes.
FAQ
What is the minimum DC current gain for the BD678G?
The minimum DC current gain (hFE) is 750, measured at a collector current of 1.5 A and a collector-emitter voltage of 3.0 V.
Is the BD678G lead-free?
Yes, the BD678G is available in a Pb-free package and is RoHS compliant.
What is the maximum collector-emitter voltage?
The maximum collector-emitter breakdown voltage (BVCEO) for the BD678G is 60 Vdc.
