ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN DARL 80V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi BD679 is a single NPN plastic power Darlington transistor manufactured using planar base island technology. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode, designed for high current switching applications. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 4 A, with a power dissipation rating of 40 W in a TO-126 package. It operates within a temperature range of -55 °C to +150 °C, offering good hFE linearity and high transition frequency suitable for audio and general-purpose amplification.
Feature Summary
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- High transition frequency and good hFE linearity
- Planar base island technology construction
Applications
- Audio amplifier circuits
- General-purpose switching applications
- Power control systems
Procurement Notes
Verify the specific manufacturer source, as the BD679 part number is produced by multiple vendors including STMicroelectronics and Siemens. Confirm that the datasheet matches the required electrical characteristics, particularly the 60 V rating and 4 A current capacity. Ensure the package type is TO-126 and check for any RoHS compliance documentation if required for your assembly process.
Selection Notes
Select this component when a high-gain NPN switch is needed with moderate voltage handling. The integrated flyback diode simplifies inductive load driving. Compare against complementary PNP variants like the BD678 if push-pull configurations are required. Consider thermal management due to the 40 W dissipation rating in the TO-126 case.
Part Context
The BD679 belongs to a family of complementary silicon power Darlington transistors. It is often paired with its PNP counterpart, the BD678, to form complete output stages. This series is characterized by robust construction and high current capability, making it a standard choice for medium-power analog and digital interface tasks across various industrial and consumer electronics designs.
Replacement Considerations
Verified substitutes include the BD678 (complementary PNP), TIP120, and MJD122. Verify pinout compatibility and thermal resistance values before substitution.
