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The BD679AS is a complementary silicon power Darlington transistor manufactured by onsemi. It utilizes planar base island technology with a monolithic Darlington configuration. The device features an integrated antiparallel collector-emitter diode, good hFE linearity, and high fT frequency characteristics.
Verify the specific suffix AS against the official onsemi datasheet to confirm pinout and thermal specifications. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the ordering number with current onsemi documentation to account for any Fairchild Semiconductor integration naming changes.
Select this component for applications necessitating high current drive capabilities within a compact monolithic structure. The integrated diode simplifies circuit design for inductive loads. Verify that the operating temperature range and power dissipation limits align with the system's thermal management strategy.
This part belongs to onsemi's portfolio of complementary silicon power Darlington transistors. These devices are designed for robust performance in power handling scenarios. The product line emphasizes reliability through planar base island technology, offering consistent electrical characteristics across the manufacturing batch.