BD680

Overview

The BD680 is a PNP power Darlington transistor manufactured by STMicroelectronics using planar base island technology. It features a monolithic configuration with an integrated antiparallel collector-emitter diode. Key electrical parameters include a maximum collector current of 4 A, a collector-emitter breakdown voltage of 80 V, and a maximum power dissipation of 40 W. The device offers a minimum DC current gain of 750 at 2 A and 3 V, with a saturation voltage of 2.8 V max at 40 mA base and 2 A collector. It supports a junction temperature up to 150°C and is available in TO-225AA or SOT-32-3 packages.

Feature Summary

• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
• Good hFE linearity for stable amplification performance
• High fT frequency capability

Applications

• Power switching circuits
• Audio amplifier stages
• Motor control interfaces

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors. Confirm package type matches design requirements as variants exist. Check RoHS compliance status if environmental regulations apply. Ensure storage conditions maintain moisture sensitivity level integrity prior to assembly.

Selection Notes

Select based on required current handling and voltage ratings for the specific load. Consider thermal management needs due to 40 W power dissipation capability. Evaluate package suitability for PCB layout constraints. Verify compatibility with driving circuitry given the specified base current requirements for saturation.

Part Context

Part of the BD6xx series of PNP power Darlington transistors. Designed for high-current applications requiring robust switching characteristics. Complements NPN counterparts in complementary push-pull configurations. Manufactured using advanced planar technology for reliability.

Replacement Considerations

BD680 is listed as a similar replacement option.