BD680

Overview

The BD680G is a PNP silicon Darlington power transistor manufactured by onsemi in the TO-225 (Case 77-09) package. It features a collector-emitter breakdown voltage of 80 V and supports a maximum continuous collector current of 4 A. The device provides a minimum DC current gain of 750 at specified test conditions and handles up to 40 W of power dissipation at 25°C case temperature. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Monolithic construction with high DC current gain
• Complementary pairing with NPN BD679A devices
• Equivalent performance to MJE702 transistors

Applications

• Output devices in general-purpose amplifier circuits
• Complementary amplifier configurations

Procurement Notes

Verify component status before design finalization, as this series includes discontinued variants. Confirm specific ordering suffixes for packaging details. Ensure thermal management aligns with derating curves. Validate compliance requirements against project specifications. Consult manufacturer documentation for current availability and recommended design practices.

Selection Notes

Select based on required voltage headroom, as the 80 V rating distinguishes it from lower-voltage counterparts like the BD676. Consider thermal resistance characteristics for heat sink sizing. Verify compatibility with complementary NPN drivers for push-pull topologies. Evaluate saturation voltage requirements for efficiency optimization.

Part Context

This component belongs to a family of plastic medium-power silicon PNP Darlingtons designed for general-purpose amplification. The series includes variants with different voltage ratings to suit various circuit demands while maintaining consistent current handling capabilities.

Replacement Considerations

The BD680G is functionally equivalent to the MJE702 transistor. Designers may consider this cross-reference for sourcing alternatives or legacy board upgrades.