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The BD680AG is a plastic, medium-power silicon PNP Darlington transistor manufactured by onsemi. It features monolithic construction with high DC current gain and an integrated antiparallel collector-emitter diode. The device operates within a collector-emitter voltage range of 80 Vdc and supports a continuous collector current of 4.0 Adc. Total device dissipation reaches 40 W at a case temperature of 25 °C, with a junction-to-case thermal resistance of 3.13 °C/W. The operating and storage junction temperature range spans from −55 to +150 °C.
Verify the specific ordering suffix 'AG' against the manufacturer's current product status documentation. Confirm that the TO-225 package style matches the required mechanical constraints. Ensure compliance with RoHS standards if lead-free assembly is mandated. Cross-reference the datasheet revision number to validate electrical characteristics against the intended design specifications.
Select this component when a PNP Darlington transistor with an 80 V collector-emitter breakdown voltage is required. The BD680AG offers a minimum DC current gain of 750 under specified test conditions. Consider the thermal management requirements given the 40 W power dissipation capability at 25 °C case temperature. Verify compatibility with complementary NPN devices in push-pull configurations.
The BD680AG belongs to the BD676/BD678/BD680/BD682 series of plastic medium-power silicon PNP Darlingtons. This series provides complementary solutions with NPN variants like the BD679A. The devices are designed for robust performance in amplifier and switching roles, featuring planar base island technology for improved linearity and frequency response.
The BD680AG is functionally equivalent to the MJE703 transistor. Designers may consider the MJE703 as a direct substitute, provided pinout and package dimensions align. Verify that alternative sources maintain the same electrical parameters and thermal characteristics.