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The BD681G is a single NPN power Darlington transistor manufactured by onsemi using planar base island technology. It features a monolithic configuration with an integrated antiparallel collector-emitter diode. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 100 V, a maximum DC collector current of 4 A, and a minimum DC current gain (hFE) of 750. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-225AA package for through-hole mounting.
Verify the specific suffix 'G' against the manufacturer's datasheet to confirm RoHS compliance status and exact pinout configuration. Ensure the ordering part number matches the required package type and thermal specifications for the intended application environment.
Select this component for designs requiring high current gain and robust switching capabilities at moderate voltages. Consider the TO-225AA package constraints for thermal management and PCB layout. Verify that the 4 A current rating and 100 V voltage limits align with the circuit's peak operating conditions.
The BD681 belongs to onsemi's portfolio of bipolar power transistors. It utilizes planar base island technology to achieve reliable performance in power switching roles. This series offers both NPN and PNP options with voltage ranges extending up to 400 V, catering to diverse industrial and consumer electronics needs.
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in hFE linearity or internal diode characteristics.