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The BD681S is a single NPN Darlington power transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 100 V and a maximum DC collector current of 4 A. The device has a minimum DC current gain (hFE) of 750 and a maximum collector cutoff current of 200 uA. It operates within a temperature range of -55 C to +150 C. The component is housed in a TO-225AA package with through-hole mounting style.
Verify the specific suffix 'S' against the official onsemi datasheet to confirm package variations or tape-and-reel specifications, as standard listings may default to bulk packaging. Ensure the manufacturer part number matches exactly to avoid confusion with similar Darlington transistors in the same family. Cross-reference RoHS compliance status directly from the latest product specification document before finalizing procurement orders.
Select this component when a high-gain NPN switch is required for moderate power levels up to 4 A. The 100 V rating suits general-purpose industrial applications. Consider the TO-225AA package constraints for PCB layout and heat dissipation requirements. Verify that the hFE minimum meets the drive requirements of the controlling logic stage.
This device belongs to the BD681 series of bipolar power transistors. It is designed for general-purpose switching and amplification tasks. The series offers a balance of voltage handling and current capacity typical of Darlington configurations. It serves as a discrete solution for power stages where integrated drivers are not feasible.
Consult the official cross-reference list for verified substitutes. Ensure any replacement maintains the 4 A current rating and 100 V voltage breakdown. Verify pinout compatibility with the TO-225AA footprint if physical interchangeability is required.