BD681STU

Overview

The BD681STU is a single NPN power Darlington transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 100 V and a maximum DC collector current of 4 A. The device utilizes planar base island technology with a monolithic Darlington configuration, including an integrated antiparallel collector-emitter diode. It operates within a temperature range of -55 °C to +150 °C and is housed in a TO-225AA package for through-hole mounting.

Feature Summary

• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
• High current gain linearity
• High transition frequency capability

Applications

• Power switching applications
• Motor control circuits
• Industrial power regulation

Procurement Notes

Verify the specific suffix STU against official datasheets to confirm package type and tape-and-reel specifications. Ensure compatibility with existing thermal management designs due to the TO-225AA form factor. Cross-reference RoHS compliance status directly with manufacturer documentation prior to procurement.

Selection Notes

Select this component for high-current switching requirements where high gain and fast switching are necessary. The integrated diode simplifies circuit design for inductive loads. Verify that the 4 A current rating and 100 V voltage limit align with the specific application's peak and steady-state demands.

Part Context

This part belongs to the BD681 series of bipolar power transistors. It is designed for general-purpose power switching and amplification. The series offers a range of voltage ratings up to 400 V, providing flexibility for various industrial and consumer electronic applications requiring robust NPN switching capabilities.

Replacement Considerations

Consult official substitution guides for equivalent NPN Darlington transistors with matching 4 A current and 100 V voltage ratings. Verify pinout compatibility and thermal resistance characteristics before replacing.