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Product Detailed Parameters
- Description：TRANS PNP DARL 100V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD682G is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with high DC current gain and operates within a collector-emitter voltage range of up to 100 Vdc. The device supports a maximum collector current of 4.0 Adc and total device dissipation of 40 W at 25 °C case temperature. Electrical characteristics include a minimum DC current gain (hFE) of 750 at 1.5 A, a collector-emitter saturation voltage of 2.5 Vdc at 1.5 A, and a base-emitter on voltage of 2.5 Vdc. It utilizes the TO-225 package.
Feature Summary
- Monolithic construction providing high DC current gain for general-purpose amplifier applications
- Integrated antiparallel collector-emitter diode structure inherent to the Darlington configuration
- Pb-Free and RoHS compliant packaging
Applications
- Output devices in complementary general-purpose amplifier circuits
- High-voltage switching applications requiring PNP polarity
- Power control stages in industrial equipment
Procurement Notes
Verify component status before procurement as the BD682G is listed as discontinued in official documentation. Confirm availability through authorized distributors or contact onsemi representatives directly for current stock information. Ensure design compliance with end-of-life management protocols if integrating this specific part number into new hardware.
Selection Notes
Select the BD682G when a PNP Darlington transistor with a 100 V collector-emitter breakdown voltage is required. Compare against the BD680G for lower voltage requirements (80 V) or the BD678G for 60 V ratings. Consider thermal derating curves for operation above 25 °C case temperature. Verify pinout compatibility with existing TO-225 footprints.
Part Context
The BD682G belongs to the BD676 series of plastic medium-power silicon PNP Darlington transistors. This family includes complementary NPN counterparts such as the BD681. The series is designed for robust performance in power amplification tasks. The BD682 variant specifically offers the highest voltage rating within this standard group, distinguishing it from the BD676, BD678, and BD680 models.
Replacement Considerations
Official documentation states that BD678, 678A, 680, and 680A are equivalent to MJE700, 701, 702, and 703 respectively. No direct substitute is explicitly confirmed for the BD682G in the provided text.
