BD682STU

BD682STU

  • Description:TRANS PNP DARL 100V 4A TO-126-3
  • Series:-

SKU:f4a8a85f465e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP DARL 100V 4A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
  • Power - Max:14 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

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BD682STU

Overview

The BD682STU is a PNP power Darlington transistor manufactured by onsemi. It utilizes planar base island technology with a monolithic Darlington configuration and features an integrated antiparallel collector-emitter diode. The device offers high current gain linearity and high transition frequency (fT). It is housed in a TO-126 package designed for through-hole mounting, supporting a maximum continuous collector current of 3 A and a maximum collector-emitter voltage of 45 V.

Feature Summary

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • Good hFE linearity for improved signal fidelity
  • High fT frequency capability

Applications

  • Power switching applications requiring high current drive
  • Linear amplifier circuits utilizing Darlington topology
  • Industrial control systems needing robust PNP output stages

Procurement Notes

Verify the specific suffix STU against official datasheets to confirm the exact package variant and tape-and-reel or tube packaging details. Ensure compliance requirements such as RoHS status are confirmed via the manufacturer's Material Composition Declaration. Cross-reference the full part number with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when a high-current PNP switch or amplifier stage is required within a 45 V supply environment. The integrated antiparallel diode simplifies circuit design for inductive loads. Consider the thermal performance of the TO-126 package and ensure adequate heatsinking for continuous operation near the 3 A limit.

Part Context

This component belongs to onsemi’s broader portfolio of Darlington transistors, which includes devices with voltage ratings up to 400 V in both NPN and PNP polarities. The BD682 series represents the medium-voltage segment, offering a balance between high current handling and switching speed suitable for general-purpose power electronics.

Replacement Considerations

Consult official substitution guides for equivalent PNP Darlington transistors with matching current and voltage ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.

BD682STUBD682STU

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