BD682T

$0.25

Description：TRANS PNP DARL 100V 4A TO-126
Series：-

SKU:7f8768a1d54b Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP DARL 100V 4A TO-126
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)：500µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD682T

Overview

The BD682T is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with high DC current gain and an integrated antiparallel collector-emitter diode. The device operates within a junction temperature range of -55°C to +150°C. Key electrical ratings include a collector-emitter voltage (VCEO) of 100 Vdc, a collector-base voltage (VCB) of 100 Vdc, and an emitter-base voltage (VEB) of 5.0 Vdc. The maximum continuous collector current is 4.0 Adc, with a total device dissipation of 40 W at a case temperature of 25°C. The thermal resistance from junction to case is 3.13 °C/W.

Feature Summary

Monolithic Darlington configuration providing high DC current gain
Integrated antiparallel collector-emitter diode for protection
Pb-Free and RoHS compliant packaging

Applications

Output devices in complementary general-purpose amplifier applications

Procurement Notes

Verify the specific ordering suffix 'T' against the official datasheet to confirm rail packaging details. Confirm availability status as some variants in this series are discontinued. Ensure compliance with RoHS standards if required for the application. Validate that the TO-225 package dimensions match the design constraints.

Selection Notes

Select this component when a PNP Darlington transistor with a 100 V collector-emitter rating is required. It serves as the complementary counterpart to NPN devices such as the BD681. Consider the 4 A current capability and 40 W power dissipation limits. Verify thermal management requirements given the 3.13 °C/W junction-to-case thermal resistance.

Part Context

The BD682T belongs to the BD676 series of plastic medium-power silicon PNP Darlingtons. This family includes complementary pairs with NPN transistors like the BD675, BD677, BD679, and BD681. The series is designed for general-purpose amplifier output stages. Other members like BD678 and BD680 are equivalent to MJE700 and MJE702 respectively.