BDW94CFP

Single Bipolar Transistors Overview

The BDW94CFP is a low voltage PNP power Darlington transistor manufactured by STMicroelectronics. It features a silicon epitaxial-base structure in a monolithic configuration, housed in a TO-220FP fully molded insulated package suitable for through-hole mounting. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 100 V and a maximum collector-base voltage (VCBO) of 100 V. The device supports a maximum DC collector current of 12 A with a minimum DC current gain (hFE) of 100. It operates within a temperature range from -65 °C to +150 °C and includes an integrated antiparallel collector-emitter diode.

Single Bipolar Transistors Feature Summary

• Monolithic Darlington configuration providing high current gain
• Fully molded insulated package compliant with 2000 V DC insulation standards
• Integrated antiparallel collector-emitter diode for switching protection

Single Bipolar Transistors Applications

• Power linear applications
• Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code BDW94CFP against official STMicroelectronics documentation to confirm pinout and thermal characteristics. Ensure the selected component matches the required PNP polarity and TO-220FP package dimensions for your PCB layout. Cross-reference datasheet revisions to validate insulation compliance and maximum operating temperature limits before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP switching solution is required with galvanic isolation between the case and circuit ground. The complementary NPN counterpart is the BDW93CFP. Consider the thermal resistance of the TO-220FP package and the need for adequate heatsinking given the 12 A current capability and power dissipation requirements in linear or saturated switching modes.

Single Bipolar Transistors Part Context

The BDW94CFP belongs to the BDW94 series of power Darlington transistors from STMicroelectronics. It is part of a complementary pair designed for robust power control tasks. The series utilizes silicon epitaxial-base technology to achieve high breakdown voltages and current handling capabilities within a single monolithic die, simplifying design compared to discrete transistor pairs.

Single Bipolar Transistors Replacement Considerations

The BDW93CFP serves as the complementary NPN device within the same family. Direct substitution requires verifying that the circuit topology supports PNP operation and that thermal management aligns with the TO-220FP package constraints.