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The BF 5020 E6327 is an RF MOSFET transistor manufactured by Infineon Technologies. It utilizes Silicon N-Channel technology and features a Tetrode configuration within a SOT-143 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 8 V, a continuous drain current (Id) of 25 mA, and a gate-source voltage (Vgs) rating of +6 V. The device supports a power dissipation (Pd) of 200 mW and operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distribution channels due to the End-of-Life status. Confirm RoHS compliance details via official datasheets before integration. Check for alternative sourcing options as availability may be restricted in certain regions. Ensure storage conditions meet moisture sensitivity level requirements to maintain device integrity during handling and soldering processes.
Select this component for designs requiring low-voltage RF performance with specific thermal constraints. Compare Vds and Id ratings against circuit load requirements to ensure safe operation margins. Evaluate the SOT-143 footprint compatibility with existing PCB layouts. Consider the operating temperature range suitability for the intended environmental conditions.
This part belongs to the BF 5020 series of RF MOSFET transistors from Infineon Technologies. It is classified under RF Small Signal MOSFETs and falls within the broader MOSFets subcategory. The manufacturer designation confirms its origin from Infineon's discrete semiconductor product line focused on radio frequency solutions.
The BF 5020 E6327 is listed as End-of-Life. No official substitute part numbers are documented in the provided data. Engineers should evaluate equivalent N-Channel RF MOSFETs with matching Vds, Id, and package specifications. Verify pinout compatibility and thermal characteristics when selecting aftermarket alternatives.