BF1005E6327HTSA1

Overview

The BF1005E6327HTSA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It features an integrated biasing network and operates at 5V. Key electrical parameters include a drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. At 800 MHz with self-biasing (VDS=5V, VG2S=4V), it delivers a typical power gain of 19 dB and a noise figure of 1.6 dB. The device is qualified according to AEC-Q101 G2 standards.

Feature Summary

• Integrated biasing network simplifies circuit design
• Optimized for low noise and high gain performance
• Suitable for RF input stages operating up to 1 GHz

Applications

• Low noise amplifier input stages
• High gain controlled RF amplifiers
• RF circuits operating up to 1 GHz

Procurement Notes

Verify the component against official Infineon documentation to confirm specifications and compliance status. Ensure that the ordering suffix matches the required package variant, as SOT-143 and SOT-143R packages have distinct pin configurations. Confirm AEC-Q101 G2 qualification requirements are met for automotive or high-reliability applications before finalizing procurement.

Selection Notes

Select this component when designing RF front-ends requiring integrated biasing and high gain up to 1 GHz. Consider the 8 V drain-source voltage limit and 200 mW power dissipation constraints. Verify thermal management capabilities, as total power dissipation decreases significantly as case temperature rises above 76 °C. Ensure the application utilizes the specific gate control voltages defined in the datasheet for optimal performance.

Part Context

This part belongs to the BF1005 series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. It is specifically engineered for RF applications where low noise and high gain are critical. The device integrates a biasing network to simplify implementation in controlled input stages.

Replacement Considerations

No official substitutes are listed in the provided documentation. When evaluating alternatives, ensure compatibility with the 8 V drain-source voltage, 25 mA continuous current, and SOT-143/SOT-143R package dimensions. Verify that replacement devices offer comparable noise figures and power gain at 800 MHz.